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DISCRETE SEMICONDUCTORS
DATA SHEET
PN4391 to 4393 N-channel silicon field-effect transistors
Product specification File under Discrete Semiconductors, SC07 April 1989
Philips Semiconductors
Product specification
N-channel silicon field-effect transistors
DESCRIPTION Symmetrical silicon n-channel junction FETs in plastic TO-92 envelopes. They are intended for applications such as analog switches, choppers, commutators etc. PINNING 1 = gate 2 = source 3 = drain Note: Drain and source are interchangeable.
1 handbook, halfpage 2 3
PN4391 to 4393
g
MAM042
d s
Fig.1 Simplified outline and symbol, TO-92.
QUICK REFERENCE DATA Drain-source voltage Total power dissipation up to Tamb = 25 C Drain current VDS = 20 V; VGS = 0 Gate-source cut-off voltage VDS = 20 V; ID = 1 nA Drain-source on-resistance ID = 1 mA; VGS = 0 RDS on max. 30 60 100 -VGS off min. max. 4 10 2 5 0.5 V 3V IDSS min. 50 25 5 mA Ptot max. PN4391 360 PN4392 PN4393 mW VDS max. 40 V
RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Drain-source voltage Gate-source voltage Gate-drain voltage Forward gate current (DC) Total power dissipation up to Tamb = 25 C Storage temperature range Junction temperature Ptot Tstg Tj max. max. 360 -65 to+150 150 mW C C VDS -VGSO -VGDO IG max. max. max. max. 40 40 40 50 V V V mA
April 1989
2
Philips Semiconductors
Product specification
N-channel silicon field-effect transistors
THERMAL RESISTANCE From junction to ambient in free air STATIC CHARACTERISTICS Tj = 25 C unless otherwise specified PN4391 Reverse gate current -VGS = 20 V; VDS = 0 -VGS = 20 V; VDS = 0 Tamb = 100 C Drain cut-off current -VGS = 12 V -VGS = 7 V -VGS = 5 V -VGS = 12 V -VGS = 7 V -VGS = 5 V VDS = 20 V IDSX IDSX IDSX IDSX IDSX IDSX max. max. max. max. max. max. min. max. min. min. max. max. max. max. max. 50 150 40 4.0 10 30 0.4 200 1.0 -IGSS max. 200 -IGSS max. 1.0 Rth j-a =
PN4391 to 4393
350
K/W
PN4392 1.0 200
PN4393 1.0 nA 200 nA nA
1.0
nA 1.0 nA nA
VDS = 20 V; Tamb = 100 C
200
nA 200 nA
Drain saturation current VDS = 20 V; VGS = 0 Gate-source breakdown voltage -IG = 1 A; VDS = 0 Gate-source cut-off voltage VDS = 20 V; ID = 1 nA Drain-source on-resistance ID = 1 mA; VGS = 0 Drain-source on-voltage VGS = 0; ID = 12 mA VGS = 0; ID = 6 mA VGS = 0; ID = 3 mA VDS on VDS on VDS on V 0.4 V 0.4 V RDS on 60 100 -VGS off 2.0 5.0 0.5 V 3.0 V -V(BR)GSS 40 40 V IDSS 25 100 5 mA 60 mA
April 1989
3
Philips Semiconductors
Product specification
N-channel silicon field-effect transistors
DYNAMIC CHARACTERISTICS Tj = 25 C unless otherwise specified PN4391 Drain-source on-resistance VDS = 0 V; VGS = 0; f = 1 kHz; Ta = 25 C Input capacitance VDS = 20 V; VGS = 0; f = 1 MHz; Ta = 25 C Feedback capacitance VDS = 0; -VGS = 12 V VDS = 0; -VGS = 7 V VDS = 0; -VGS = 5 V Switching times test conditions VDD = 10 V; VGS = 0 to VGS off ID -VGS off RL Rise time Turn-on time Fall time Turn-off time tr ton tf toff = = = max. max. max. max. 12 12 750 5 15 15 20 f = 1 MHz Crss Crss Crss max. max. max. 5 Ciss max. 16 RDS on max. 30
PN4391 to 4393
PN4392 60 16
PN4393 100 16 pF pF
5
pF 5 pF
6.0 7.0 1550 5 15 20 35
3.0 mA 5.0 V 3150 5 ns 15 ns 30 ns 50 ns
ok, halfpage
VDD 10 nF
50 10 F RL
1 F
VGS = 0 V Vi -VGS off
10%
90% toff tf 90% ton tr
DUT 50
SAMPLING SCOPE 50
Vo
MBK289
10%
MBK288
Fig.2 Switching times test circuit.
Fig.3 Input and output waveforms.
April 1989
4
Philips Semiconductors
Product specification
N-channel silicon field-effect transistors
PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads
PN4391 to 4393
SOT54
c
E d A L b
1
D
2
e1 e
3
b1
L1
0
2.5 scale
5 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 5.2 5.0 b 0.48 0.40 b1 0.66 0.56 c 0.45 0.40 D 4.8 4.4 d 1.7 1.4 E 4.2 3.6 e 2.54 e1 1.27 L 14.5 12.7 L1(1) 2.5
Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 REFERENCES IEC JEDEC TO-92 EIAJ SC-43 EUROPEAN PROJECTION ISSUE DATE 97-02-28
April 1989
5
Philips Semiconductors
Product specification
N-channel silicon field-effect transistors
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Short-form specification Limiting values
PN4391 to 4393
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. The data in this specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
April 1989
6

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